IRFP460APBF 数据手册
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IRFP460 4 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech IRFP460APBF
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 280W
- Total Gate Charge (Qg@Vgs): 105nC@10V
- Drain Source Voltage (Vdss): 500V
- Input Capacitance (Ciss@Vds): 3100pF@25V
- Continuous Drain Current (Id): 20A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 270mΩ@10V,12A
- Package: TO-247AC-3
- Manufacturer: Vishay Intertech
- Series: MegaMOS™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-3P-3 Full Pack
- detail: N-Channel 500V 20A (Tc) 260W (Tc) Through Hole TO-247AD